Title :
SET and RESET state resistance modeling of phase change memory
Author :
Kwong, K.C. ; He, Frank ; Chan, Mansun
Author_Institution :
Dept. of Comput. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China
Abstract :
An empirical model for calculating the SET and RESET state resistance of phase change memory (PCM) is developed base on a resistor network method. The model has been extensively compared with numerical simulations with good accuracy. The model can be directly implemented into SPICE for simulating circuits with PCM elements.
Keywords :
electric resistance; phase change memories; RESET state resistance modeling; phase change memory; resistor network method; Amorphous materials; Circuit simulation; Crystallization; Electrodes; Helium; Nonvolatile memory; Phase change materials; Phase change memory; Resistors; SPICE;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394216
