DocumentCode
3224606
Title
Diode based gate oxide anti-fuse one time programmable memory array in standard CMOS process
Author
Ng, K.P. ; Lee, M.C. ; Kwong, K.C. ; Chan, Mansun
Author_Institution
Dept. of Comput. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China
fYear
2009
fDate
25-27 Dec. 2009
Firstpage
457
Lastpage
460
Abstract
A diode based gate oxide anti-fuse one time programmable memory array in standard CMOS process without additional process is presented. The requirements of various components in the anti-fuse cell are discussed. The solution to high voltage reliability problem when programming the gate oxide anti-fuse is provided. Measurement results are performed to confirm the functionality of the design.
Keywords
CMOS integrated circuits; integrated circuit reliability; anti-fuse one time programmable memory array; diode based gate oxide; high voltage reliability; standard CMOS process; Analog integrated circuits; Breakdown voltage; CMOS process; Circuit testing; Diodes; Integrated circuit measurements; Performance evaluation; Process design; Secure storage; Semiconductor device measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location
Xi´an
Print_ISBN
978-1-4244-4297-3
Electronic_ISBN
978-1-4244-4298-0
Type
conf
DOI
10.1109/EDSSC.2009.5394219
Filename
5394219
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