A low power temperature insensitive voltage supervisory circuit in metal gate technology

A low power and temperature insensitive voltage supervisory circuit implemented in 2.25 ¿m metal gate process is presented in this paper. Through accurate modeling of the MOS transistors in the metal process with the consideration of leakage current, the proposed voltage supervisory circuit can generate a stable detected voltage at 3 V in a wide input voltage range of 1.5 V to 6 V, and operating temperature range of -30°C to 90°C, while implemented with very compact silicon area of 0.06 mm². The whole circuit consumes less then 72 ¿W at 3 V input.