Title :
A sub-1V CMOS bandgap reference with high-order curvature compensation
Author :
Liu, Zhidong ; Cheng, Yuhua
Author_Institution :
Shanghai Res. Inst. of Microelectron., Peking Univ., Shanghai, China
Abstract :
A novel sub-1V CMOS bandgap reference with high-order curvature compensation is proposed. Utilizing current mode structure with resistance division, the minimum operating supply voltage of the proposed bandgap circuit is 800mV. Utilizing high-order curvature compensation technique, the bandgap circuit produced a temperature coefficient of 3.65 ppm/°C in a temperature range between -40°C and 125°C. At 27°C, 1.2V supply voltage, the typical output reference voltage is 634.93mV, the total current is 24.34 uA, PSRR is 63.8 dB@DC. This proposed bandgap reference has been verified in SMIC 0.13-um mixed mode CMOS Technology, which can be applied in portable electronic products, DRAM, and flash memory.
Keywords :
CMOS integrated circuits; reference circuits; current 24.34 muA; current mode structure; high-order curvature compensation; resistance division; size 0.13 micron; sub-1V CMOS bandgap reference; temperature 27 C; voltage 1.2 V; voltage 634.93 mV; voltage 800 mV; CMOS memory circuits; CMOS technology; DC-DC power converters; Flash memory; Low voltage; Microelectronics; Photonic band gap; Random access memory; Resistors; Temperature distribution;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394223
