Title :
A high power efficiency Class AB switched-opamp for low voltage low power sigma-delta modulators
Author :
Wang, Hanging ; Xu, Jian ; Wu, Xiaobo
Author_Institution :
Inst. of VLSI Design, Zhejiang Univ., Hangzhou, China
Abstract :
Two-stage Class-A switched-opamp (SO) is the most popular module in previous low voltage low power SO sigma-delta modulators (SDM). The SO saves about 30%~40% of the total power since its output stage is just turned off at the integrating phase. To further increase efficiency a novel high power efficiency class AB current mirror SO is proposed in this paper. By turning off the entire SO together with its common mode feedback (CMFB) circuit, the power consumption of the SO can be reduced by 50%. A Class-AB load-compensated opamp version improves the power efficiency further. The proposed SO was fabricated in a 0.35 ¿m TSMC CMOS standard process and achieved a DC gain of 62.7 dB, a GBW of 4.39 MHz and a slew rate of 1.2 V/¿s when the load capacitor is 10 pF. The effective power consumption including the CMFB circuit is 6.6 ¿W under 1.5 V supply voltage. The simulation results showed that the proposed SO can be applied to low power low voltage SDM with a frequency of less than 0.5 MHz.
Keywords :
CMOS digital integrated circuits; current mirrors; feedback amplifiers; low-power electronics; operational amplifiers; sigma-delta modulation; switched current circuits; TSMC CMOS standard process; bandwidth 4.39 MHz; class AB current mirror switched-opamp; common mode feedback circuit; gain 62.7 dB; low power sigma-delta modulators; low voltage sigma-delta modulators; power 6.6 muW; power consumption; power efficiency; size 0.35 mum; two-stage switched-opamp; voltage 1.5 V; CMOS process; Capacitors; Circuit simulation; Delta-sigma modulation; Energy consumption; Feedback circuits; Gain; Low voltage; Mirrors; Turning; common mode feedback circuit (CMFB); sigma-delta modulator (SDM); switched opamp (SO);
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394224