DocumentCode
3224728
Title
High voltage pulse power supply using IGBT stacks
Author
Kim, Jong-Hyun ; Ryu, Myung-Hyo ; Shenderey, S. ; Kim, Jong-Soo ; Rim, Geuyn-Hie
Author_Institution
Korea Electrotechnol. Res. Inst., Changwon, South Korea
Volume
3
fYear
2004
fDate
2-6 Nov. 2004
Firstpage
2843
Abstract
High voltage pulse power supply using IGBT stacks and pulse transformer for plasma source ion implantation is proposed in this study. To increase voltage rating, twelve IGBTs are used in series and a step-up pulse transformer is utilized. To increase current rating, the proposed system makes use of synchronized three pulse generators composed of diode, capacitor and IGBT stack. The proposed pulse power supply uses only semiconductor switches made of IGBTs with only two active drivers. Hence, the system is compact, and has long lifetime, high efficiency, and high parameter flexibility such as voltage magnitude, the PRR. and the pulse width.
Keywords
insulated gate bipolar transistors; plasma immersion ion implantation; pulse transformers; pulsed power supplies; IGBT stack; PRR; active drivers; capacitor; diode; high voltage pulse power supply; ion implantation; plasma source; pulse generator; pulse width; semiconductor switches; step-up pulse transformer; voltage magnitude; Capacitors; Insulated gate bipolar transistors; Ion implantation; Plasma sources; Power semiconductor switches; Pulse generation; Pulse transformers; Pulsed power supplies; Semiconductor diodes; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics Society, 2004. IECON 2004. 30th Annual Conference of IEEE
Print_ISBN
0-7803-8730-9
Type
conf
DOI
10.1109/IECON.2004.1432259
Filename
1432259
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