Passive evaluation of surface and bulk ionic deposition from resist removal using surface photovoltage

Author

Brown, Stuart ; Ackmann, Paul ; Wenner, Val ; Lowell, John ; Ostrout, Wayne ; Willson, C. Grant

Author_Institution

Adv. Micro Devices Inc., Austin, TX, USA

fYear

1995

fDate

13-15 Nov 1995

Firstpage

316

Lastpage

321

Abstract

In this paper we report on the application of optical surface photovoltage (SPV) to both quantify and qualify both surface and bulk effects of transition and alkaline metals deposited from photoresist in CZ P-type silicon. Using standard and specially prepared 1.2 μ resist chemistry, we will demonstrate systematically that specific ions can affect surface charge and minority carrier lifetime. We will also show how the technique can be used for nondestructive, in-line assessment of resist-deposited contaminant metals.

Keywords

carrier lifetime; minority carriers; photoresists; photovoltaic effects; surface contamination; 1.2 micron; CZ p-type silicon; Si; alkaline metals; bulk ionic deposition; contaminants; minority carrier lifetime; nondestructive in-line measurement; optical surface photovoltage; photoresist; resist chemistry; surface charge; surface ionic deposition; transition metals; Chemical processes; Chemistry; Iron; Manufacturing processes; Optical filters; Optical surface waves; Pollution measurement; Resists; Surface charging; Surface contamination;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference and Workshop, 1995. ASMC 95 Proceedings. IEEE/SEMI 1995

ISSN

1078-8743

Print_ISBN

0-7803-2713-6

Type

conf

DOI

10.1109/ASMC.1995.484396

Filename

484396