Fast speed lateral IGBT with Buried N-region Controlled Anode on SOI substrate

A new lateral insulated-gate bipolar transistor (LIGBT) structure on SOI substrate, called buried N-region controlled anode LIGBT (BNCA-LIGBT), is proposed and discussed. The BNCA-LIGBT is a modified structure of the N-region controlled anode LIGBT (NCA-LIGBT) which we have presented earlier. Numerical simulation results of the BNCA-LIGBT operation show that the turn-off speed is faster and on-state voltage drop is lower than that of the NCA-LIGBT. Furthermore, the BNCA-LIGBT also has the advantages of NCA-LIGBT such as efficient area using, easy driving, effectively NDR suppression in forward I-V characteristics and high breakdown voltage. The proposed SOIBNCA-LIGBT can be fabricated by the conventional SOI power IC´s process steps.