Title :
Fast speed lateral IGBT with Buried N-region Controlled Anode on SOI substrate
Author :
Chen, Wensuo ; Xie, Gang ; Zhang, Bo ; Li, Zhaoji ; Zhao, Mei
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A new lateral insulated-gate bipolar transistor (LIGBT) structure on SOI substrate, called buried N-region controlled anode LIGBT (BNCA-LIGBT), is proposed and discussed. The BNCA-LIGBT is a modified structure of the N-region controlled anode LIGBT (NCA-LIGBT) which we have presented earlier. Numerical simulation results of the BNCA-LIGBT operation show that the turn-off speed is faster and on-state voltage drop is lower than that of the NCA-LIGBT. Furthermore, the BNCA-LIGBT also has the advantages of NCA-LIGBT such as efficient area using, easy driving, effectively NDR suppression in forward I-V characteristics and high breakdown voltage. The proposed SOIBNCA-LIGBT can be fabricated by the conventional SOI power IC´s process steps.
Keywords :
insulated gate bipolar transistors; silicon-on-insulator; I-V characteristic; SOI substrate; buried N-region controlled anode; high breakdown voltage; insulated-gate bipolar transistor; lateral IGBT; Anodes; Cathodes; Circuits; Conductivity; Electric breakdown; Insulated gate bipolar transistors; Insulation; Numerical simulation; Phosphors; Switches;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394238
