Process integrated of high aspect ratio copper dual damascene process

The performance of the manufacturing process in semiconductor determines the overall manufacturability of the process. It has been known that pattern missing and defects could be prevented by optimal the process module tuning. The abnormal pattern collapse observed in this process and numerous defects could be prevented by optimizing the fabrication process module tuning. To successfully integrated sub-micron dual damascene process with good electrical and reliability performance after process improvement of lithography patterning, etch and dual damascene cleaning on semiconductor wafer fabrication processes were included.