DocumentCode
3225327
Title
Use of influence diagrams and neural networks in modeling LPCVD
Author
Nadi, Fariborz ; Agogino, A.M. ; Hodges, D.A.
Author_Institution
California Univ., Berkeley, CA, USA
fYear
1990
fDate
21-23 May 1990
Firstpage
111
Lastpage
112
Abstract
An adaptive learning architecture has been developed for modeling manufacturing processes involving several controlling variables. Experimental results of applying the new architecture to process modeling and recipe synthesis for LPCVD (low-pressure chemical vapor deposition) of undoped polysilicon are described. Control parameters considered are pressure, temperature, gas-flow rate, wafer position, and time. Models for both deposition rate and final mechanical stress in the film have been developed. By using the generalization ability of neural networks in the synthesis algorithm, this architecture can produce new recipes for the process. Two such recipes have been generated for the LPCVD process. One is a zero-stress polysilicon film receipt; the second is a uniform deposition rate receipt based on the use of a nonuniform temperature distribution during deposition
Keywords
chemical vapour deposition; neural nets; process control; semiconductor growth; adaptive learning architecture; deposition rate; experimental results; final mechanical stress; gas pressure; gas-flow rate; influence diagrams; low-pressure chemical vapor deposition; modeling LPCVD; modeling manufacturing processes; neural networks; nonuniform temperature distribution during deposition; process modeling; recipe synthesis; several controlling variables; temperature; time; undoped polysilicon; uniform deposition rate receipt; wafer position; zero-stress polysilicon film receipt; Adaptive control; Chemical vapor deposition; Manufacturing processes; Mechanical variables control; Network synthesis; Neural networks; Pressure control; Process control; Programmable control; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing Science Symposium, 1990. ISMSS 1990., IEEE/SEMI International
Conference_Location
Burlingame, CA
Type
conf
DOI
10.1109/ISMSS.1990.66120
Filename
66120
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