• DocumentCode
    3225327
  • Title

    Use of influence diagrams and neural networks in modeling LPCVD

  • Author

    Nadi, Fariborz ; Agogino, A.M. ; Hodges, D.A.

  • Author_Institution
    California Univ., Berkeley, CA, USA
  • fYear
    1990
  • fDate
    21-23 May 1990
  • Firstpage
    111
  • Lastpage
    112
  • Abstract
    An adaptive learning architecture has been developed for modeling manufacturing processes involving several controlling variables. Experimental results of applying the new architecture to process modeling and recipe synthesis for LPCVD (low-pressure chemical vapor deposition) of undoped polysilicon are described. Control parameters considered are pressure, temperature, gas-flow rate, wafer position, and time. Models for both deposition rate and final mechanical stress in the film have been developed. By using the generalization ability of neural networks in the synthesis algorithm, this architecture can produce new recipes for the process. Two such recipes have been generated for the LPCVD process. One is a zero-stress polysilicon film receipt; the second is a uniform deposition rate receipt based on the use of a nonuniform temperature distribution during deposition
  • Keywords
    chemical vapour deposition; neural nets; process control; semiconductor growth; adaptive learning architecture; deposition rate; experimental results; final mechanical stress; gas pressure; gas-flow rate; influence diagrams; low-pressure chemical vapor deposition; modeling LPCVD; modeling manufacturing processes; neural networks; nonuniform temperature distribution during deposition; process modeling; recipe synthesis; several controlling variables; temperature; time; undoped polysilicon; uniform deposition rate receipt; wafer position; zero-stress polysilicon film receipt; Adaptive control; Chemical vapor deposition; Manufacturing processes; Mechanical variables control; Network synthesis; Neural networks; Pressure control; Process control; Programmable control; Semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing Science Symposium, 1990. ISMSS 1990., IEEE/SEMI International
  • Conference_Location
    Burlingame, CA
  • Type

    conf

  • DOI
    10.1109/ISMSS.1990.66120
  • Filename
    66120