• DocumentCode
    3225333
  • Title

    The simulation study of Gaussian-doped base 4H-SiC bipolar junction transistor

  • Author

    Li, Jiaxuan ; Zhang, Yuming ; Zhang, Yimen ; Tang, Xiaoyan

  • Author_Institution
    Key Lab. of Wide Band-Gap Semicond. Mater. & Devices, Xidian Univ., Xi´´an, China
  • fYear
    2009
  • fDate
    25-27 Dec. 2009
  • Firstpage
    318
  • Lastpage
    321
  • Abstract
    A model of Gauss-doped base 4H-SiC bipolar junction transistor (BJT) is simulated by two dimensional device simulator ISE. The result shows Gaussian-doped base can effectively improve the current gain from 16.65 to 44.49, and decrease the output resisitance R0, Early voltage Va. Base with Gaussian-doped SiC BJT also enhance the small signal AC performance.
  • Keywords
    bipolar transistors; semiconductor device models; silicon compounds; wide band gap semiconductors; 3D device simulator; BJT; Gaussian-doped base 4H-SiC bipolar junction transistor; SiC; current gain; early voltage; output resisitance; small signal AC performance; Doping profiles; Etching; Gaussian processes; MOSFETs; Passivation; Power semiconductor switches; Semiconductor materials; Semiconductor process modeling; Silicon carbide; Transistors; Gauss Doping BJT Current Gain Frequency characteristics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
  • Conference_Location
    Xi´an
  • Print_ISBN
    978-1-4244-4297-3
  • Electronic_ISBN
    978-1-4244-4298-0
  • Type

    conf

  • DOI
    10.1109/EDSSC.2009.5394253
  • Filename
    5394253
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3225333