Title :
Structure design and characteristics analysis of 4H-SiC PiN switching diodes
Author :
Zhang, Jiayang ; Zhang, M. Yuming ; Zhang, Yimen ; Tang, M. Xiaoyan
Author_Institution :
Lab. of Wide Band-Gap Semicond. Mater. & Devices, Xidian Univ., Xi´´an, China
Abstract :
A novel structure of 4H-SiC PiN switching diode with gradual changing doping concentration in n-base region is proposed in order to improve the switching characteristics. The device characteristics are simulated by ISE-TCAD. It is shown that there are about 30% increment in the softness parameters S and 10% shorter in reverse recovery time trr, compared with conventional SiC PiN switching diode with constant doping in n-base region. Simultaneously, as the conductivity modulation effect in the n-base region, the forward I-V characteristics are almost invariant.
Keywords :
doping; p-i-n diodes; silicon compounds; 4H PiN switching diodes; ISE-TCAD; SiC; conductivity modulation effect; gradual changing doping concentration; Boron; Conductivity; Gallium arsenide; Power semiconductor switches; Schottky diodes; Semiconductor device doping; Semiconductor diodes; Semiconductor materials; Silicon carbide; Voltage; ISE; PiN; SiC; gradual changing doping; reverse recover;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394255
