Germanium-on-insulator fabricated by ion implantation and dry oxidation technique

Germanium-on-insulator (GeOI) is a promising platform for silicon-based photonics as well as microelectronics. In this work GeOI structures were produced by a modified Ge-condensation technique, in which Ge ions were implanted into a top silicon layer. Through an appropriate schedule of cyclic dry oxidation, a ~20 nm thick, single crystalline Ge layer could be obtained. Structural investigation confirmed that the layer was fully-relaxed, which is desirable for the overgrowth of Ge and GaAs for photonic applications.