• DocumentCode
    3225402
  • Title

    The effect of surface charge on the breakdown behaviors of SiC SBD with planar terminations

  • Author

    Qing-wen, Song ; Yu-ming, Zhang ; Yi-men, Zhang ; Zhang-xu, Wang

  • Author_Institution
    Key Lab. of Wide Band-Gap Semicond. Mater. & Devices, Xidian Univ., Xi´´an, China
  • fYear
    2009
  • fDate
    25-27 Dec. 2009
  • Firstpage
    291
  • Lastpage
    294
  • Abstract
    A numerical model for 4H-SiC Schottky barrier diode (SBD) is proposed in this paper and the breakdown behaviors are achieved. The influences of the surface charge (Qs) on the breakdown characteristic of 4H-SiC SBD with different planar terminations, including junction termination extension (JTE) and field plate (FP) assisted JTE are calculated and investigated in detail.
  • Keywords
    Schottky barriers; Schottky diodes; silicon compounds; surface charging; wide band gap semiconductors; Schottky barrier diode; SiC; breakdown behaviors; field plate; junction termination extension; surface charge effect; Charge carrier processes; Doping; Electric breakdown; Electron mobility; Numerical models; Poisson equations; Samarium; Schottky diodes; Semiconductor materials; Silicon carbide; Schottky diode; SiC; breakdown Characteristic; planar termination; surface charge;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
  • Conference_Location
    Xi´an
  • Print_ISBN
    978-1-4244-4297-3
  • Electronic_ISBN
    978-1-4244-4298-0
  • Type

    conf

  • DOI
    10.1109/EDSSC.2009.5394258
  • Filename
    5394258
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3225402