Title :
Accessibility of nano-crossbar arrays of resistive switching devices
Author_Institution :
Strategic Technol. Group, GLOBALFOUNDRIES, Sunnyvale, CA, USA
Abstract :
This paper discusses the accessibility of nano-crossbar arrays of resistive switching devices, using both analytical approaches and statistical simulations. Voltage configurations of the wordlines and bitlines in crossbar arrays play a critical role on sensing margin, disturbance, and power efficiency. Access resistance to the array affects the actual line voltage and degrades the sensing margin. Nonlinearity in switching device characteristics may improve accessibility of crossbar arrays.
Keywords :
nanotechnology; statistical analysis; switches; nanocrossbar arrays; resistive switching devices; statistical simulations; voltage configurations; Equivalent circuits; Nanoscale devices; Resistance; Resistors; Sensors; Stress; Switches; crossbar array; nonlinearity; resistive switching devices; sensing margin;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4577-1514-3
Electronic_ISBN :
1944-9399
DOI :
10.1109/NANO.2011.6144367
