Title :
Thickness determination of 4H-SiC epitaxial films by infrared reflectance
Author :
Tang, Xiaoyan ; Zhang, Yuming ; Li, Zhiyun ; Zhang, Yimen ; Yao, Haijiao
Author_Institution :
Key Lab. of Wide Band-Gap Semicond. Mater. & Devices, Xidian Univ., Xi´´an, China
Abstract :
The refractive index of n-type 4H-SiC as a function of the wave number is calculated. The results show that the epi-films with doping ranges lower than 1018 cm-3 are the necessary condition of appearing interference fringes in the infrared reflectance spectra of SiC homoepitaxial films. A modified method is proposed based on the refractive index model varying with frequency which is more accurate and stable than the original method in a wide spectra range.
Keywords :
epitaxial layers; infrared spectra; light reflection; refractive index; silicon compounds; thickness measurement; wide band gap semiconductors; SiC; homoepitaxial films; infrared reflectance spectra; interference fringe; refractive index; thickness determination; Dielectric constant; Frequency; Infrared spectra; Interference; Optical films; Optical materials; Reflectivity; Refractive index; Silicon carbide; Substrates; 4H-SiC; Infrared reflectance; Refractive index;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394259
