High power parallel plane 4H-SiC PiN diode with FP-Assisted-JTE termination

With the developing of process technology and material quality, the progress of commercializing a 4H-SiC power PiN diode has been made greatly, but for very high power 4H-SiC PiN diode, it still faces many difficult challenges. In this paper, we design a parallel plane Power 4H-SiC PiN Diode, in which ideal breakdown voltage is about 1.9kv. From numerable simulation results with ISE-TCAD software, we see that JTE termination technique can improve diode breakdown voltage. We also find that FP-Assisted-JTE termination technique can make more improvement of breakdown voltage than single JTE termination technique.