Title :
A simulation of DC and AC performance of 4H-SiC Tunneling Emitter Bipolar Transistor (TEBT)
Author :
Liu, Jing ; Zhang, Yuming ; Zhang, Yimen
Author_Institution :
Key Lab. of Wide Band-Gap Semicond. Mater. & Devices, Xidian Univ., Xi´´an, China
Abstract :
A novel HBT structure, tunneling emitter bipolar transistor (TEBT), is proposed in this paper. The DC and AC small-signal characteristics of the TEBT are simulated. The DC gain of the proposed structure is 45. To get better AC performance, the structure is modified, reducing the thickness of collector and enhancing the doping of base. the characteristic frequency (fT) is 2.6 GHz, the maximum oscillating frequency (fmax) is 67.0 GHz and the corresponding power gain can reach 32.
Keywords :
heterojunction bipolar transistors; semiconductor device models; silicon compounds; tunnel transistors; wide band gap semiconductors; AC performance; AC small-signal characteristics; BJT structure; DC gain; DC performance; DC small-signal characteristics; HBT structure; SiC; base doping; bipolar junction transistor; characteristic frequency; collector thickness; frequency 2.6 GHz; frequency 67.0 GHz; heterojunction bipolar transistor; maximum oscillating frequency; power gain; tunneling emitter bipolar transistor; Bipolar transistors; Tunneling; 4H-SiC; bipolar transistor; tunneling emitter;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394263
