A simulation of DC and AC performance of 4H-SiC Tunneling Emitter Bipolar Transistor (TEBT)

Author

Liu, Jing ; Zhang, Yuming ; Zhang, Yimen

Author_Institution

Key Lab. of Wide Band-Gap Semicond. Mater. & Devices, Xidian Univ., Xi´´an, China

fYear

2009

fDate

25-27 Dec. 2009

Firstpage

326

Lastpage

329

Abstract

A novel HBT structure, tunneling emitter bipolar transistor (TEBT), is proposed in this paper. The DC and AC small-signal characteristics of the TEBT are simulated. The DC gain of the proposed structure is 45. To get better AC performance, the structure is modified, reducing the thickness of collector and enhancing the doping of base. the characteristic frequency (f_T) is 2.6 GHz, the maximum oscillating frequency (f_max) is 67.0 GHz and the corresponding power gain can reach 32.

Keywords

heterojunction bipolar transistors; semiconductor device models; silicon compounds; tunnel transistors; wide band gap semiconductors; AC performance; AC small-signal characteristics; BJT structure; DC gain; DC performance; DC small-signal characteristics; HBT structure; SiC; base doping; bipolar junction transistor; characteristic frequency; collector thickness; frequency 2.6 GHz; frequency 67.0 GHz; heterojunction bipolar transistor; maximum oscillating frequency; power gain; tunneling emitter bipolar transistor; Bipolar transistors; Tunneling; 4H-SiC; bipolar transistor; tunneling emitter;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of

Conference_Location

Xi´an

Print_ISBN

978-1-4244-4297-3

Electronic_ISBN

978-1-4244-4298-0

Type

conf

DOI

10.1109/EDSSC.2009.5394263

Filename

5394263