DocumentCode
3225508
Title
A more accurate potential-based drain current model for bulk-MOSFETs
Author
Huang, Yucong ; Lin, Xinnan ; Zhang, Jian ; Zhuang, Hao
Author_Institution
Key Lab. of Integrated Microsyst., Peking Univ., Beijing, China
fYear
2009
fDate
25-27 Dec. 2009
Firstpage
8
Lastpage
11
Abstract
This paper presents a new and more accurate potential based model for bulk MOSFET compared to the traditional charge-sheet surface potential model. The channel potential of the bulk MOSFET is obtained by solving Poisson equation and an accurate current expression is obtained base on it. Taking Pao-Sah model as a standard, the relative errors of the charge-sheet model may be as large as 4% in the saturation region while that of the present model is less than 1.05%.
Keywords
MOSFET; Poisson equation; Pao-Sah model; Poisson equation; bulk MOSFET; charge-sheet surface potential model; potential-based drain current model; MOSFET circuits; Poisson equations;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location
Xi´an
Print_ISBN
978-1-4244-4297-3
Electronic_ISBN
978-1-4244-4298-0
Type
conf
DOI
10.1109/EDSSC.2009.5394264
Filename
5394264
Link To Document