A high gain lateral BJT on thin film silicon substrate

Author

Homayoni, Faranak ; Hosseini, Seyed Ebrahim ; Baedi, Javad

Author_Institution

Dept. of Electron. Eng., Tarbiat Moallem Univ. of Sabzevar, Sabzevar, Iran

fYear

2009

fDate

25-27 Dec. 2009

Firstpage

278

Lastpage

281

Abstract

In this paper, a symmetric dual-emitter LBJT (SDE LBJT) structure on TFSOI substrates has been designed and simulated, and suitable doping profiles are used for improving LBJT performance. Simulations show that the device has good DC characteristics. The SDE LBJT with a base length of 0.2 Â¿m can achieve a current gain over 1500, which is 7.5 times improvement in current gain, in comparison to the LBJT reported previously. Also has good current drive and high frequency capability. These results indicate that the SDE LBJT structure is suitable for many low power mixed mode applications.

Keywords

CMOS integrated circuits; bipolar transistors; doping profiles; thin film transistors; CMOS technology; Si; TFSOI substrates; current gain; doping profiles; good DC characteristics; high frequency capability; high gain lateral BJT; size 0.2 mum; symmetric dual-emitter LBJT structure; thin film substrate; CMOS technology; Costs; Doping profiles; Germanium silicon alloys; Performance gain; Semiconductor thin films; Silicon germanium; Silicon on insulator technology; Substrates; Voltage; Current gain; Lateral BJT; SOI;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of

Conference_Location

Xi´an

Print_ISBN

978-1-4244-4297-3

Electronic_ISBN

978-1-4244-4298-0

Type

conf

DOI

10.1109/EDSSC.2009.5394267

Filename

5394267