Title :
Advantages of low voltage applications and issues to be solved in SOI technology [DRAMs]
Author :
Yoshimi, M. ; Terauchi, M. ; Nishiyama, A. ; Numano, M. ; Kubota, Hajime ; Watanabe, S. ; Tango, H.
Author_Institution :
ULSI Res. Labs., Toshiba Corp., Kawasaki, Japan
fDate :
30 Sep-3 Oct 1996
Abstract :
With low voltage applications as the main objective, SOI technology has made rapid and substantial progress in recent years. This paper describes the current status of SOI technology with emphasis on analysis of dynamic retention characteristics in low voltage DRAMs, countermeasures regarding the floating-body effect in low voltage region, and reliability issues in state-of-the-art SOI substrate technology
Keywords :
DRAM chips; integrated circuit design; integrated circuit reliability; integrated circuit technology; silicon-on-insulator; DRAMs; SOI substrate technology; dynamic retention characteristics; floating-body effect; low voltage applications; reliability issues; Degradation; Germanium silicon alloys; Guidelines; Leakage current; Low voltage; Photonic band gap; Random access memory; Research and development; Silicon germanium; Ultra large scale integration;
Conference_Titel :
SOI Conference, 1996. Proceedings., 1996 IEEE International
Conference_Location :
Sanibel Island, FL
Print_ISBN :
0-7803-3315-2
DOI :
10.1109/SOI.1996.552466
