Title :
A study on gate voltage fluctuation of MOSFET induced by switching operation of adjacent MOSFET in high voltage power conversion circuit
Author :
Funaki, Tsuyoshi
Author_Institution :
Osaka Univ., Suita, Japan
Abstract :
The development of high voltage SiC power MOSFET has made the fast switching of high voltage possible. The high dv/dt caused by fast high voltage switching induces the difficulty of mal-operation of power MOSFET with the self turn-on phenomenon by the fluctuation of gate voltage. This phenomenon is recognized as intra EMC. This paper studies the mechanism of self turn-on phenomenon and discusses the suppression method.
Keywords :
electromagnetic compatibility; fluctuations; power MOSFET; power conversion; silicon compounds; wide band gap semiconductors; SiC; adjacent MOSFET; gate voltage fluctuation; high voltage power conversion circuit; intra EMC; mal-operation; power MOSFET; self turn-on phenomenon; suppression method; switching operation; voltage switching; Capacitance; Electromagnetic compatibility; Logic gates; MOSFET; Silicon; Silicon carbide; Threshold voltage; gate voltage fluctuation; high voltage; power MOSFET; self turn on;
Conference_Titel :
Electromagnetic Compatibility of Integrated Circuits (EMC Compo), 2013 9th Intl Workshop on
Conference_Location :
Nara
DOI :
10.1109/EMCCompo.2013.6735183
