Title :
Transport mechanism of the leakage current in MIS capacitor with HfO2/SiO2 stack gate
Author :
Kuang, Qianwei ; Liu, Hongxia ; Zhou, Wen ; Gao, Bo ; Zhao, Aaron ; Tallavarjula, Sai
Author_Institution :
Sch. of Microelectron., Xidian Univ., Xi´´an, China
Abstract :
I-V characteristic of the HfO2/SiO2 stack gate MIS capacitor is investigated. The gate leakage current in HfO2/SiO2 stack gate MIS capacitor decreases after constant voltage stress, which is caused by electron trapping. By analyzing the experiment and calculation results, the main transport mechanisms of the gate leakage current in HfO2/SiO2 stack gate is presented. The different transport mechanisms in HfO2 gate and HfO2/SiO2 stack gate are proposed.
Keywords :
MIS capacitors; hafnium compounds; leakage currents; silicon compounds; HfO2-SiO2; I-V characteristic; MIS capacitor; constant voltage stress; electron trapping; gate leakage current; stack gate; transport mechanism; Capacitors; Dielectric thin films; Electron traps; Equations; Hafnium oxide; Leakage current; Silicon; Stress; Tunneling; Voltage; Fowler-Nordhei tunneling; Frenkel-Poole emission; HfO2; I-V characteristic; Schottky emission; high-k;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394276
