Transport mechanism of the leakage current in MIS capacitor with HfO2/SiO2 stack gate

Author

Kuang, Qianwei ; Liu, Hongxia ; Zhou, Wen ; Gao, Bo ; Zhao, Aaron ; Tallavarjula, Sai

Author_Institution

Sch. of Microelectron., Xidian Univ., Xi´´an, China

fYear

2009

fDate

25-27 Dec. 2009

Firstpage

229

Lastpage

232

Abstract

I-V characteristic of the HfO₂/SiO₂ stack gate MIS capacitor is investigated. The gate leakage current in HfO₂/SiO₂ stack gate MIS capacitor decreases after constant voltage stress, which is caused by electron trapping. By analyzing the experiment and calculation results, the main transport mechanisms of the gate leakage current in HfO₂/SiO₂ stack gate is presented. The different transport mechanisms in HfO₂ gate and HfO₂/SiO₂ stack gate are proposed.

Keywords

MIS capacitors; hafnium compounds; leakage currents; silicon compounds; HfO₂-SiO₂; I-V characteristic; MIS capacitor; constant voltage stress; electron trapping; gate leakage current; stack gate; transport mechanism; Capacitors; Dielectric thin films; Electron traps; Equations; Hafnium oxide; Leakage current; Silicon; Stress; Tunneling; Voltage; Fowler-Nordhei tunneling; Frenkel-Poole emission; HfO2; I-V characteristic; Schottky emission; high-k;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of

Conference_Location

Xi´an

Print_ISBN

978-1-4244-4297-3

Electronic_ISBN

978-1-4244-4298-0

Type

conf

DOI

10.1109/EDSSC.2009.5394276

Filename

5394276