DocumentCode :
3225829
Title :
Thermal design and structure of thick film hybrid IC based on insulated aluminium substrate
Author :
Sakamoto, Noriaki ; Kanai, Tetsuo ; Ohkawa, Katsumi
Author_Institution :
Sanyo Electric Co Ltd., Osaka, Japan
fYear :
1993
fDate :
2-4 Feb 1993
Firstpage :
186
Lastpage :
193
Abstract :
The structural characteristics of an insulated metal substrate based on aluminum (IMST) and a circuit assembly innovation by IMST (CAIT) mounting technology are discussed. It is shown that IMST has an excellent heat dissipation property, which provides the active and passive elements mounted on this substrate with a very low thermal resistance from them to the substrate. The hybrid IC based on this substrate enables the high density packaging of circuits including power semiconductors. The relationship between the structure and thermal resistance for each circuit component mounted on the IMST substrate is described
Keywords :
cooling; hybrid integrated circuits; packaging; thick film circuits; Al; IMST; active elements; circuit assembly; heat dissipation property; high density packaging; insulated metal substrate; passive elements; power semiconductors; structural characteristics; thermal resistance; thick film hybrid; Aluminum; Assembly; Hybrid integrated circuits; Insulation; Integrated circuit packaging; Resistance heating; Substrates; Technological innovation; Thermal resistance; Thick films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Thermal Measurement and Management Symposium, 1993. SEMI-THERM IX., Ninth Annual IEEE
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-0863-8
Type :
conf
DOI :
10.1109/STHERM.1993.225315
Filename :
225315
Link To Document :
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