Title :
Optimization of N content for Higk-k LaTiON gate dielectric of Ge MOS capacitor
Author :
Xu, H.X. ; Xu, J.P. ; Li, C.X. ; Liu, L. ; Lai, P.T. ; Chan, C.L.
Author_Institution :
Dept. of Electron. Sci. & Technol., Huazhong Univ. of Sci. & Technol., Wuhan, China
Abstract :
Thin LaTiON gate dielectric is deposited on Ge (100) substrate by reactive co-sputtering of La2O3 and Ti targets under different Ar/N2 ratios of 24/3, 24/6, 24/12, and 24/18, and their electrical properties are investigated and compared. Results show that the LaTiON gate-dielectric Ge MOS capacitor prepared at an Ar/N2 ratio of 24/6 exhibits highest relative permittivity, smallest capacitance equivalent thickness, and best electrical characteristics, including low interface-state density, small C-V hysteresis and low gate leakage current. This is attributed to the fact that a suitable N content in LaTiON can effectively suppress the growth of low-k GeOx interfacial layer between LaTiON and Ge substrate.
Keywords :
MOS capacitors; germanium; hysteresis; lanthanum compounds; oxygen compounds; permittivity; sputter deposition; titanium compounds; Ar-N2; Ge (100) substrate; Ge MOS capacitor; GeO; La2O3; LaTiON; capacitance equivalent thickness; electrical properties; higk-k LaTiON gate dielectric; low gate leakage current; low interface-state density; reactive co-sputtering; relative permittivity; small C-V hysteresis; thin LaTiON gate dielectric; Dielectrics; MOS capacitors;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394279
