Title :
Study on electrical characteristics of amorphous InGaZnO MOS capacitors with High κ HfOxNy gate dielectric
Author :
Tong, Xingsheng ; Zou, Xiao
Author_Institution :
Dept. of Electromachine Eng., Jianghan Univ., Wuhan, China
Abstract :
High κ HfOxNy gate dielectric film is deposited on amorphous InGaZnO (a-IGZO) by radio frequency reactive sputtering HfO2 target in N2 ambient. The κ-value is approximately 1.5 times higher than pure HfO2 owing to the existence of Hf-N bond. The results of SIMS, AFM and electrical properties measurement also indicate that nitrogen incorporation into HfO2 ameliorate the surface morphology of dielectric film, suppress the atom diffusion at the interface, reduce the hysteresis, decrease the gate leakage current, thus enhance device performance.
Keywords :
MOS capacitors; amorphous semiconductors; atomic force microscopy; dielectric hysteresis; high-k dielectric thin films; leakage currents; secondary ion mass spectra; sputtering; surface morphology; AFM; HfON; InGaZnO; N2; SIMS; amorphous MOS capacitors; atom diffusion; electrical characteristics; electrical properties measurement; gate leakage current; high κ gate dielectric film; hysteresis; nitrogen incorporation; radio frequency reactive sputtering; surface morphology; Amorphous materials; Atomic measurements; Bonding; Current measurement; Dielectric films; Electric variables; Hafnium oxide; MOS capacitors; Radio frequency; Sputtering; HfOxNy; MOS capacitors; amorphous InGaZnO;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394280
