Title :
Electrical properties of polycrystalline p-CuxO MOS capacitors with SiO2/HfO2 high κ stack gate dielectric on silicon substrate
Author :
Zou, Xiao ; Fang, Guojia ; Yuan, Longyan ; Liu, Nishuang ; Long, Hao
Author_Institution :
Dept. of Electromachine Eng., Jianghan Univ., Jianghan, China
Abstract :
Polycrystalline p-type CuxO film was deposited after growth of HfO2 dielectric on Si substrate by pulsed laser deposition, and CuxO MOS capacitors with SiO2/HfO2 stack gate dielectric have been primarily fabricated and investigated. Results of measurements indicate that capacitance equivalent thickness and equivalent κ-value of SiO2/HfO2 stack dielectric for post-deposition annealing (PDA) sample are 4.78 nm and 10.2 respectively, and gate leakage current density is ˜10-4 A/cm2 at Vg = -1 V. Results also show that PDA can improve quality of interface and reduce gate leakage.
Keywords :
MOS capacitors; annealing; copper compounds; electric properties; hafnium compounds; leakage currents; pulsed laser deposition; silicon compounds; substrates; CuxO-HfO2-SiO2-Si; PDA sample; electrical properties; gate leakage current density; high k stack gate dielectric; interface quality; polycrystalline MOS capacitors; post-deposition annealing; pulsed laser deposition; silicon substrate; MOS capacitor; Polycrystalline CuxO film; pulsed laser deposition;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394281
