DocumentCode
3225943
Title
Thermal resistance, thermomechanical stress and thermal cycling endurance of silicon chips bonded with adhesives
Author
Bjorneklett, A. ; Tuhus, Tom ; Halbo, Leif ; Kristiansen, Helge
Author_Institution
Center for Ind. Res., Oslo, Norway
fYear
1993
fDate
2-4 Feb 1993
Firstpage
136
Lastpage
143
Abstract
The thermomechanical stress in large silicon chips bonded to rigid substrates with adhesives is caused by the mismatch in thermal expansion between the silicon chip and the substrate. The stress induced during the chip attachment process was measured using integrated piezoresistive strain gauges on test chips. The stress was different between different adhesives. The effect of temperature cycling (i.e., stress cycling) was investigated by measuring the thermal resistance between chip and substrate. An increasing thermal resistance that strongly depends on the mismatch in thermal expansion was found. The wear-out mechanisms were crack growth and detachment
Keywords
adhesion; life testing; packaging; strain gauges; thermal resistance; Si chip; chip attachment process; crack growth; detachment; integrated piezoresistive strain gauges; rigid substrates; temperature cycling; thermal cycling endurance; thermal expansion; thermal resistance; thermomechanical stress; wear-out mechanisms; Bonding; Electrical resistance measurement; Semiconductor device measurement; Silicon; Strain measurement; Stress measurement; Thermal expansion; Thermal resistance; Thermal stresses; Thermomechanical processes;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Thermal Measurement and Management Symposium, 1993. SEMI-THERM IX., Ninth Annual IEEE
Conference_Location
Austin, TX
Print_ISBN
0-7803-0863-8
Type
conf
DOI
10.1109/STHERM.1993.225321
Filename
225321
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