• DocumentCode
    3225943
  • Title

    Thermal resistance, thermomechanical stress and thermal cycling endurance of silicon chips bonded with adhesives

  • Author

    Bjorneklett, A. ; Tuhus, Tom ; Halbo, Leif ; Kristiansen, Helge

  • Author_Institution
    Center for Ind. Res., Oslo, Norway
  • fYear
    1993
  • fDate
    2-4 Feb 1993
  • Firstpage
    136
  • Lastpage
    143
  • Abstract
    The thermomechanical stress in large silicon chips bonded to rigid substrates with adhesives is caused by the mismatch in thermal expansion between the silicon chip and the substrate. The stress induced during the chip attachment process was measured using integrated piezoresistive strain gauges on test chips. The stress was different between different adhesives. The effect of temperature cycling (i.e., stress cycling) was investigated by measuring the thermal resistance between chip and substrate. An increasing thermal resistance that strongly depends on the mismatch in thermal expansion was found. The wear-out mechanisms were crack growth and detachment
  • Keywords
    adhesion; life testing; packaging; strain gauges; thermal resistance; Si chip; chip attachment process; crack growth; detachment; integrated piezoresistive strain gauges; rigid substrates; temperature cycling; thermal cycling endurance; thermal expansion; thermal resistance; thermomechanical stress; wear-out mechanisms; Bonding; Electrical resistance measurement; Semiconductor device measurement; Silicon; Strain measurement; Stress measurement; Thermal expansion; Thermal resistance; Thermal stresses; Thermomechanical processes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Thermal Measurement and Management Symposium, 1993. SEMI-THERM IX., Ninth Annual IEEE
  • Conference_Location
    Austin, TX
  • Print_ISBN
    0-7803-0863-8
  • Type

    conf

  • DOI
    10.1109/STHERM.1993.225321
  • Filename
    225321