Title :
Effects of sputtering and annealing temperatures on MOS capacitor with HftiOn gate dielectric
Author :
Wang, C.D. ; Li, C.X. ; Leung, C.H. ; Lai, P.T.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China
Abstract :
In this work, Al/HfTiON/n-Si capacitors with different sputtering and annealing temperatures are studied. Larger accumulation capacitance and flat-band voltage are observed for samples with higher sputtering or post-deposition annealing temperature. Gate conduction mechanisms are only affected by sputtering temperature slightly. The flat-band voltage shift and interface-state density at midgap under high-field gate injection and substrate injection are investigated, and the results imply electron detrapping in the gate dielectric.
Keywords :
MOS capacitors; aluminium; annealing; hafnium compounds; silicon; sputter deposition; titanium compounds; Al-HfTiON; HfTiON gate dielectric; MOS capacitor; annealing temperature; electron detrapping; flat-band voltage shift; gate conduction mechanism; high-field gate injection; interface-state density; sputtering temperature; substrate injection; Annealing; Capacitance; Dielectric measurements; Dielectric substrates; Dielectric thin films; High K dielectric materials; High-K gate dielectrics; MOS capacitors; Sputtering; Temperature;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394283
