HfO2 inter-poly dielectric characteristics with interface fluorine passivation

Author

Chen, Yung-Yu ; Hsieh, Chih-Ren ; Lu, Kwung-Wen ; Lou, Jen-Chung

Author_Institution

Dept. of Electron. Eng., Lunghwa Univ. of Sci. & Technol., Taoyuan, Taiwan

fYear

2009

fDate

25-27 Dec. 2009

Firstpage

233

Lastpage

235

Abstract

In this paper, the reliabilities and insulating characteristics of the fluorinated hafnium oxide (HfO₂) inter-poly dielectric (IPD) through fluorine ion implantation are studied for the first time. HfO₂ IPD characteristics are strongly dependent on the fluorine implantation dosage. Due to the terminating dangling bonds and oxygen vacancies, reducing interface oxidation and smoothing interface roughness, optimized fluorinated HfO₂ can be used to drastically improve the IPD reliabilities; consequently, this study concludes that fluorinated HfO₂ IPD is suitable for mass production applications in the future stacked-gate flash memory technology.

Keywords

dielectric materials; flash memories; hafnium compounds; ion implantation; passivation; HfO₂; fluorinated hafnium oxide; fluorine ion implantation; inter-poly dielectric characteristics; interface fluorine passivation; interface oxidation; interface roughness smoothing; oxygen vacancies; stacked-gate flash memory technology; Capacitors; Chemical vapor deposition; Dielectric constant; Dielectric losses; Flash memory; Hafnium oxide; Leakage current; Nonvolatile memory; Optimized production technology; Passivation; HfO2; flash memory; fluorine;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of

Conference_Location

Xi´an

Print_ISBN

978-1-4244-4297-3

Electronic_ISBN

978-1-4244-4298-0

Type

conf

DOI

10.1109/EDSSC.2009.5394289

Filename

5394289