DocumentCode
3226166
Title
Electron mobility in nMOSFETs/SIMOX with a 2-nm-thick silicon layer
Author
Nakajima, Yasuyuki ; Omura, Yasuhisa
Author_Institution
NTT LSI Labs., Atsugi, Japan
fYear
1996
fDate
30 Sep-3 Oct 1996
Firstpage
11
Lastpage
12
Abstract
This paper demonstrates conductance characteristics and electron mobility properties in nMOSFETs/SIMOX with a 2-nm-thick silicon layer and a 2-nm-thick gate oxide layer based on both semi-classical and quantum-mechanical considerations. The results are quite significant because manufacturers will not encounter serious obstacles in future extremely thin SOI devices, and because the improvement of interface property should bring about greater enhanced electron mobility
Keywords
MOSFET; SIMOX; characteristics measurement; electron mobility; elemental semiconductors; silicon; 2 nm; SIMOX; Si; conductance characteristics; electron mobility; gate oxide layer; interface property; nMOSFETs; quantum-mechanical considerations; semi-classical considerations; thin SOI devices; Capacitance; Electron mobility; Fabrication; Laboratories; Large scale integration; MOSFETs; Rough surfaces; Silicon; Surface roughness; Transmission electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1996. Proceedings., 1996 IEEE International
Conference_Location
Sanibel Island, FL
ISSN
1078-621X
Print_ISBN
0-7803-3315-2
Type
conf
DOI
10.1109/SOI.1996.552469
Filename
552469
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