Discrete low-frequency transistors subjected to high-frequency CW and pulse-modulated sine signals

Discrete low-frequency bipolar transistors are subjected to two types of interferences: CW (continuous wave) and pulsed modulated sine signal. In the goal to study the electromagnetic immunity of integrated circuits, devices are biased at low current level. Specific interference frequency bands induce changes in the transistor output voltage, even with frequency values out of band of operation of the devices. Analysis of results obtained under CW signal injection highlights the presence of physical phenomena of rectification and ac current crowding. Pulse-modulated sines show that the amplitude of the interference mean power influences the value of the output voltage offset. Parameters of the pulse interference can be changed to modify the transient response of the transistor.