• DocumentCode
    3226336
  • Title

    Low propagation loss in a one-port resonator fabricated on single-crystal diamond

  • Author

    Fujii, Satoshi ; Odawara, Tatsuya ; Omori, Tatsuya ; Hashimoto, Ken-ya ; Torii, Hironori ; Umezawa, Hitoshi ; Shikata, Shinichi

  • Author_Institution
    Acad. Ind. Collaboration & Intellectual Property, Chiba Univ., Chiba, Japan
  • fYear
    2011
  • fDate
    18-21 Oct. 2011
  • Firstpage
    555
  • Lastpage
    558
  • Abstract
    Diamond has the highest known surface acoustic wave (SAW) phase velocity, sufficient for applications in the gigahertz range. However, although numerous studies have demonstrated SAW devices on polycrystalline diamond thin films, all have large propagation loss in comparison to single-crystal materials such as LiNbO3. In this study, we successfully fabricated low-propagation-loss one-port SAW resonators on single-crystal diamond synthesized using a high-pressure and high-temperature method. The devices had an interdigital transducer (IDT)/AlN/diamond structure. The best performing device exhibited a resonance frequency of 5.3 GHz and a Q-value of 2440. After correcting for ohmic losses, the propagation loss was found to be 0.012dB/wavelength. Furthermore, a large fQ product value of 1013 was also obtained. These results show that single-crystal diamond SAW resonators have great potential for use in 5-GHz-band oscillators.
  • Keywords
    Q-factor; aluminium compounds; diamond; high-pressure effects; high-temperature effects; surface acoustic wave resonators; wide band gap semiconductors; AlN-C; Q-value; SAW devices; diamond; high-pressure method; high-temperature method; interdigital transducer; low-propagation-loss one-port SAW resonators; ohmic losses; surface acoustic wave phase velocity; Diamond-like carbon; Films; Propagation losses; Resonant frequency; Substrates; Surface acoustic waves; AlN; one port SAW resonator; single crystal of diamond;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium (IUS), 2011 IEEE International
  • Conference_Location
    Orlando, FL
  • ISSN
    1948-5719
  • Print_ISBN
    978-1-4577-1253-1
  • Type

    conf

  • DOI
    10.1109/ULTSYM.2011.0134
  • Filename
    6293218