DocumentCode
3226561
Title
Fabrication and model validation for CMUTs operated in permanent contact mode
Author
Ho, Min-Chieh ; Kupnik, Mario ; Vaithilingam, Srikant ; Khuri-Yakub, Butrus T.
Author_Institution
Stanford Univ., Stanford, CA, USA
fYear
2011
fDate
18-21 Oct. 2011
Firstpage
1016
Lastpage
1019
Abstract
We present the successful fabrication and finite element analysis (FEA) validation of capacitive micromachined ultrasonic transducers (CMUTs) targeting applications under a wide and varying pressure range (~ 1 - 20 atm), such as ultrasonic flow metering (UFM). In our devices each plate is in permanent contact with the bottom of the cavity, even at zero d.c. bias voltage condition. The fabrication is based on a direct wafer bonding process (thick buried oxide layer process), which allows the realization of only partially connected bottom electrodes. The fabricated devices show measured performance in good agreement with FEA. The results for the measured plate profiles confirm the permanent contact and are within 3.5% of the static FEA results. Further, in comparison to laser vibrometer measurements, the FEA modal analysis predicts the 1st and 2nd mode frequencies for permanent contact devices within 3% and 1.5%, respectively. In addition, the overall trends of resonant frequency and contact radii as a function of d.c. bias voltage are both consistent with FEA. Our results show that the fabrication of CMUTs in permanent contact mode is feasible, and that FEA serves as an excellent tool for predicting and designing both the static and dynamic behavior of CMUTs operated in the permanent contact mode.
Keywords
capacitive sensors; finite element analysis; micromechanical devices; wafer bonding; CMUT; FEA; capacitive micromachined ultrasonic transducers; direct wafer bonding process; fabrication; finite element analysis; model validation; permanent contact mode; Acoustics; Cavity resonators; Displacement measurement; Electrodes; Fabrication; Frequency measurement; Resonant frequency; CMUT; Fabrication; permanent contact mode; thick BOX process; ultrasonic flow meter; wide pressure range;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium (IUS), 2011 IEEE International
Conference_Location
Orlando, FL
ISSN
1948-5719
Print_ISBN
978-1-4577-1253-1
Type
conf
DOI
10.1109/ULTSYM.2011.0249
Filename
6293232
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