Title :
Deposition of crack-free 30 µm AlN on IDT/ZnO/Si for wave guiding layer acoustic wave applications
Author :
Legrani, O. ; Elmazria, O. ; Pigeat, P. ; Bartasyte, A. ; Zhgoon, S. ; Talbi, A.
Author_Institution :
Inst. Jean Lamour (IJL), Nancy Univ., Vandoeuvre les Nancy, France
Abstract :
Realization of packageless acoustic waveguiding sensors on basis of AlN/IDT/ZnO/Si structure was studied. The influence of ZnO and AlN deposition parameters and interdigital transducer structure on the performance of the device is discussed. The thick AlN layer, up to 30 μm, was deposited on IDT/ZnO/Si under optimized conditions for the growth of crack-free layers. Film texture and crystalline quality were examined by using X-ray diffraction methods. Surface morphology and interfaces between layers were investigated by transmission electron microscopy and atomic force microscopy. Acoustic performances of devices were characterized by a network analyzer.
Keywords :
II-VI semiconductors; III-V semiconductors; X-ray diffraction; aluminium compounds; atomic force microscopy; semiconductor growth; semiconductor thin films; sputter deposition; surface acoustic wave transducers; surface morphology; surface texture; transmission electron microscopy; wide band gap semiconductors; AlN-IDT-ZnO-Si structure; AlN-ZnO-Si; Si; X-ray diffraction; acoustic wave applications; atomic force microscopy; crack-free layer growth; crystalline materials; deposition parameters; film textures; interdigital transducer structure; layer interfaces; network analyzer; packageless acoustic waveguiding sensors; surface morphology; thick layers; transmission electron microscopy; wave guiding layers; Acoustic waves; Films; Silicon; Sputtering; Substrates; Surface treatment; Zinc oxide; WLAW; ZnO; crack_free; rf sputtering; thick AlN;
Conference_Titel :
Ultrasonics Symposium (IUS), 2011 IEEE International
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4577-1253-1
DOI :
10.1109/ULTSYM.2011.0574
