The microwave noise characteristics of InAlN/GaN HEMTs

Author

Chen, Yongbo ; Guo, Yunchuan ; Huang, Wen ; Xu, Ruimin

Author_Institution

EHF Key Lab. of Fundamental Sci., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2010

fDate

8-11 May 2010

Firstpage

1710

Lastpage

1714

Abstract

The microwave noise characteristics of InAlN/GaN heterojunction HEMTs are analysed by using an equivalent circuit model in this paper. It shows that the minimum noise figure of InAlN/GaN HEMTs can be comparable with that of AlGaN/GaN HEMTs at X-band and higher frequency band. However, at the lower microwave frequency band, the minimum noise figure of InAlN/GaN HEMTs is a little worse, the reason of which is because of its high gate-leakage current. At last, three proposals are provided to improve the noise characteristics of InAlN/GaN HEMTs.

Keywords

aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; leakage currents; microwave field effect transistors; noise; AlGaN; HEMT; InAlN; X-band frequency; equivalent circuit model; gate leakage current; heterojunction HEMT; microwave frequency band; microwave noise characteristics; minimum noise figure; Aluminum gallium nitride; Circuit noise; Equivalent circuits; Gallium nitride; HEMTs; Heterojunctions; MODFETs; Microwave frequencies; Noise figure; Proposals;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-5705-2

Type

conf

DOI

10.1109/ICMMT.2010.5524738

Filename

5524738