General purpose logic gate using ballistic nanotransistors

This paper presents a new type of logic gate and associated circuit concepts for a recently proposed device, the ballistic deflection transistor (BDT). The BDT is a planar structure based on InGaAs/InAlAs etched into a two-dimensional electron gas (2DEG), and exhibits ballistic transport behavior at room temperature. We propose a general purpose gate (GPG) configuration and present measured results from a fabricated GPG using BDTs, as well as a simulation model for examining other GPG configurations. Using this scheme, any 2-input logic function and its compliment can be realized by selectively connecting the four GPG output terminals.