Breakdown behaviour in wide bandgap collector GaInP/GaAs double heterojunction bipolar transistors

Author

Flitcroft, R.M. ; Houston, P.A. ; Lye, B.C. ; Button, C.C. ; David, J.P.R.

Author_Institution

Dept. of Electron. & Electr. Eng., Sheffield Univ., UK

fYear

1997

fDate

24-25 Nov 1997

Firstpage

273

Lastpage

278

Abstract

AlInP as the collector material has been used to demonstrate double heterojunction bipolar transistors with record high breakdown voltages, BV_CEO≈BV_CBO=74 V for a 1 μm collector doped to 2×10¹⁶ cm^-3 without any voltage dependence on the gain. Electron impact ionisation coefficients have been measured in GaAs, GaInP and AlInP and dead space effects have been observed at low electric fields in highly doped collectors. A reduction in ionisation coefficients has been observed at higher ambient operating temperatures. Ionisation data enables the accurate modelling of breakdown in HBTs

Keywords

III-V semiconductors; electric breakdown; electron impact ionisation; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave power transistors; power bipolar transistors; 1 micron; 74 V; AlInP; AlInP collector material; DHBT; GaInP-GaAs; HBTs; breakdown behaviour; dead space effects; double heterojunction bipolar transistors; electron impact ionisation coefficients; high breakdown voltages; highly doped collectors; ionisation coefficients reduction; low electric fields; modelling; wide bandgap collector; Breakdown voltage; Double heterojunction bipolar transistors; Electric breakdown; Electric variables measurement; Electrons; Extraterrestrial measurements; Gain measurement; Gallium arsenide; Impact ionization; Photonic band gap;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on

Conference_Location

London

Print_ISBN

0-7803-4135-X

Type

conf

DOI

10.1109/EDMO.1997.668617

Filename

668617