Title :
Effect of base metal contacts on the performance of InGaP/GaAs HBTs under temperature and bias stress
Author :
Bashar, S.A. ; Sheng, H. ; Amin, F.A. ; Rezazadeh, A.A. ; Crouch, MA ; Adami, F. ; Cattani, L.
Author_Institution :
Dept. of Electron. Eng., King´´s Coll., London, UK
Abstract :
A wide range of base ohmic contacts have been studied to determine each of their suitability for usage in InGaP/GaAs HBTs for operation at high temperature. A novel base ohmic contact using Ti/ZrB2/Au has been developed with ZrB2 as a barrier layer to prevent Au indiffusion from the contact layer to the base region. Current stress at high temperature on these HBTs show that the devices with this novel contact remain unchanged beyond 20 hours whereas devices with conventional contacts show clear signs of degradation after only a few hours of stress
Keywords :
III-V semiconductors; diffusion barriers; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; ohmic contacts; semiconductor device metallisation; InGaP-GaAs; InGaP/GaAs HBTs; Ti-ZrB2-Au; ZrB2 barrier layer; base metal contacts; bias stress; current stress; high temperature; ohmic contact; temperature stress; Annealing; Carbon dioxide; Gallium arsenide; Geometry; Gold; Heterojunction bipolar transistors; MOCVD; Silicon; Temperature; Testing;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-4135-X
DOI :
10.1109/EDMO.1997.668620
