Title :
Factors influencing intermodulation distortion performance of a FET
Author :
Webster, Danny R. ; Ataei, G.R. ; Haigh, D.G. ; Kaunisto, Risto
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
Abstract :
This work describes some of the factors which influence the intermodulation distortion performance of a FET. These factors include bias point, voltage gain, sample to sample variation and gate length. The work also shows how it is sometimes possible to exploit these factors to minimise intermodulation distortion for a given device whilst maintaining output matching
Keywords :
field effect transistors; intermodulation distortion; FET; HEMT; IMD performance; JFET; MESFET; MOSFET; bias point; gate length; intermodulation distortion; sample to sample variation; voltage gain; Educational institutions; FETs; Gallium arsenide; HEMTs; Intermodulation distortion; Linearity; MESFETs; MOSFET circuits; Nonlinear distortion; Voltage;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-4135-X
DOI :
10.1109/EDMO.1997.668624
