• DocumentCode
    322730
  • Title

    Factors influencing intermodulation distortion performance of a FET

  • Author

    Webster, Danny R. ; Ataei, G.R. ; Haigh, D.G. ; Kaunisto, Risto

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
  • fYear
    1997
  • fDate
    24-25 Nov 1997
  • Firstpage
    309
  • Lastpage
    314
  • Abstract
    This work describes some of the factors which influence the intermodulation distortion performance of a FET. These factors include bias point, voltage gain, sample to sample variation and gate length. The work also shows how it is sometimes possible to exploit these factors to minimise intermodulation distortion for a given device whilst maintaining output matching
  • Keywords
    field effect transistors; intermodulation distortion; FET; HEMT; IMD performance; JFET; MESFET; MOSFET; bias point; gate length; intermodulation distortion; sample to sample variation; voltage gain; Educational institutions; FETs; Gallium arsenide; HEMTs; Intermodulation distortion; Linearity; MESFETs; MOSFET circuits; Nonlinear distortion; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on
  • Conference_Location
    London
  • Print_ISBN
    0-7803-4135-X
  • Type

    conf

  • DOI
    10.1109/EDMO.1997.668624
  • Filename
    668624
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=322730