• DocumentCode
    3227353
  • Title

    Low IR drop and low power parallel CAM design using gated power transistor technique

  • Author

    Do, Anh Tuan ; Chen, Shoushun ; Kong, Zhi-Hui ; Yeo, Kiat Seng

  • Author_Institution
    Sch. of EEE, Nanyang Technol. Univ., Singapore, Singapore
  • fYear
    2010
  • fDate
    6-9 Dec. 2010
  • Firstpage
    708
  • Lastpage
    711
  • Abstract
    In this paper we analyzed the IR drop problem in large scale content addressable memory (CAM) and proposed a simple yet efficient gated power transistor technique. Each row of CAM cells is powered by two metal rails, one for the memory element and another one for the comparison transistors and the match lines. The latter rail is powered by a row-based transistor, which presents a physical “gate” to limit the peak current during comparison. Smart control scheme is proposed to automatically turn the power transistor off using a feedback delay loop. Simulation reports 96% reduction in IR drop and 64% save in total energy consumption, for a conceptual 8K-word CAM macros based on Chartered 0.13μm CMOS technology.
  • Keywords
    CMOS integrated circuits; content-addressable storage; low-power electronics; CMOS technology; IR drop; comparison transistors; content addressable memory; gated power transistor technique; low power parallel CAM design; memory element; metal rails; size 0.13 mum; smart control; Computer aided manufacturing; Logic gates; Power demand; Power transistors; Rails; Threshold voltage; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (APCCAS), 2010 IEEE Asia Pacific Conference on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    978-1-4244-7454-7
  • Type

    conf

  • DOI
    10.1109/APCCAS.2010.5774811
  • Filename
    5774811