DocumentCode
3227353
Title
Low IR drop and low power parallel CAM design using gated power transistor technique
Author
Do, Anh Tuan ; Chen, Shoushun ; Kong, Zhi-Hui ; Yeo, Kiat Seng
Author_Institution
Sch. of EEE, Nanyang Technol. Univ., Singapore, Singapore
fYear
2010
fDate
6-9 Dec. 2010
Firstpage
708
Lastpage
711
Abstract
In this paper we analyzed the IR drop problem in large scale content addressable memory (CAM) and proposed a simple yet efficient gated power transistor technique. Each row of CAM cells is powered by two metal rails, one for the memory element and another one for the comparison transistors and the match lines. The latter rail is powered by a row-based transistor, which presents a physical “gate” to limit the peak current during comparison. Smart control scheme is proposed to automatically turn the power transistor off using a feedback delay loop. Simulation reports 96% reduction in IR drop and 64% save in total energy consumption, for a conceptual 8K-word CAM macros based on Chartered 0.13μm CMOS technology.
Keywords
CMOS integrated circuits; content-addressable storage; low-power electronics; CMOS technology; IR drop; comparison transistors; content addressable memory; gated power transistor technique; low power parallel CAM design; memory element; metal rails; size 0.13 mum; smart control; Computer aided manufacturing; Logic gates; Power demand; Power transistors; Rails; Threshold voltage; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (APCCAS), 2010 IEEE Asia Pacific Conference on
Conference_Location
Kuala Lumpur
Print_ISBN
978-1-4244-7454-7
Type
conf
DOI
10.1109/APCCAS.2010.5774811
Filename
5774811
Link To Document