DocumentCode
3227536
Title
New design for output power improvement of a 20GHz push-push FET DRO
Author
Ghadikolaei, Sahar Biazar ; Tayarani, Majid
Author_Institution
Dept. Electr. Eng., Iran Univ. of Sci. & Technol. Tehran, Tehran, Iran
fYear
2010
fDate
6-9 Dec. 2010
Firstpage
732
Lastpage
735
Abstract
In this paper, we present a new configuration of push-push dielectric resonator oscillator with a DR coupled to a common microstrip line. This circuit demonstrated output power improvement with respect to the existing push-push DRO structure. The second harmonic output power is above 6 dBm with a fundamental suppression of over 80 dBc. In addition this DRO exhibits good phase noise performance.
Keywords
dielectric resonator oscillators; field effect transistors; microstrip lines; phase noise; common microstrip line; dielectric resonator oscillator; frequency 20 GHz; output power improvement; phase noise; push-push FET DRO; second harmonic output power; Microwave oscillators; Resonant frequency; Voltage-controlled oscillators; dielectric resonator oscillator; harmonic oscillator; push-push oscillator;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (APCCAS), 2010 IEEE Asia Pacific Conference on
Conference_Location
Kuala Lumpur
Print_ISBN
978-1-4244-7454-7
Type
conf
DOI
10.1109/APCCAS.2010.5774820
Filename
5774820
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