The influence of the ultrasonic strain on the polarization of quantum-well heterolasers emission

Author

Kulakova, Liudmila ; Averkiev, Nikita ; Gorelov, Vladislav

Author_Institution

Ioffe Phys.-Tech. Inst., St. Petersburg, Russia

fYear

2011

fDate

18-21 Oct. 2011

Firstpage

2165

Lastpage

2168

Abstract

The paper deals with an acousto-electron effect in the nanodimensional laser heterostructures. This is an ultrasonic strain-induced modulation of the hole states in the quantum well of these structures. The effect results in a modulation of the laser emission intensity as well as in a turn of the emission polarization by the sound strain. Theoretical treatment of the experimental data is presented.

Keywords

III-V semiconductors; arsenic compounds; gallium compounds; indium compounds; light polarisation; photoluminescence; semiconductor heterojunctions; semiconductor quantum wells; ultrasonic waves; InGaAsP-InP; acousto-electron effect; emission polarization; hole states; laser emission intensity modulation; nanodimensional laser heterostructures; quantum-well heterolaser emission; sound strain; ultrasonic strain-induced modulation; Acoustics; Laser theory; Polarization; Quantum mechanics; Quantum well lasers; Strain; Acoustic-electron interaction; heterolaser emission polarization; hole states in quantum well;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium (IUS), 2011 IEEE International

Conference_Location

Orlando, FL

ISSN

1948-5719

Print_ISBN

978-1-4577-1253-1

Type

conf

DOI

10.1109/ULTSYM.2011.0537

Filename

6293298