Title :
Effects of CNT diameter variability on a CNFET-based SRAM
Author :
Shahidipour, Hamed ; Zhong, Yue ; Ahmadi, Arash ; Maharatna, Koushik
Author_Institution :
Sch. of Electron. & Comput. Sci., Univ. of Southampton, Southampton, UK
Abstract :
In this paper we study the effects of Single Walled Carbon Nanotube (SWCNT) diameter variations on performance and stability of 6-T SRAM cells. Parametric and Monte Carlo simulations are performed for SRAM designs based on different SWCNT mean diameters. Parameters such as read/write delays, Static Noise Margin (SNM) and Write Margin (WM) are studied together with the effects of diameter variations on them. Our results show that minimum variation of timing characteristics and noise margins can be achieved at a CNT mean diameter of 1.2nm.
Keywords :
Monte Carlo methods; SRAM chips; carbon nanotubes; nanotube devices; CNFET-based SRAM; Monte Carlo simulations; diameter variability; read-write delays; single walled carbon nanotube; static noise margin; write margin; CNTFETs; Carbon nanotubes; Delay; Integrated circuit modeling; Logic gates; Random access memory;
Conference_Titel :
Circuits and Systems (APCCAS), 2010 IEEE Asia Pacific Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-7454-7
DOI :
10.1109/APCCAS.2010.5774837
