Fabrication of high frequency SAW resonators using AlN/Diamond/Si technology

Author

Iriarte, G.F. ; Rodríguez, J.G. ; Ro, R. ; Lee, R. ; Williams, O.A. ; Araujo, D. ; Villar, M.P. ; Calle, F.

Author_Institution

ISOM-ETSIT, Polytech. Univ. of Madrid, Madrid, Spain

fYear

2011

fDate

18-21 Oct. 2011

Firstpage

573

Lastpage

576

Abstract

The synthesis of AlN on diamond is a great challenge, not only because of the between an AlN/diamond interface, but also because of the high surface roughness of the diamond layers [8, 9]. In the case of microcrystalline diamond, the last problem was solved by polishing. However, polishing nanocrystalline diamond is not straightforward. For the diamond synthesis by CVD, silicon was used as a substrate. The diamond/Si interface presents a smoother diamond than the diamond/air interface. This paper reports on the fabrication of high frequency SAW resonators using AlN/Diamond/Si technology.

Keywords

III-V semiconductors; aluminium compounds; diamond; elemental semiconductors; nanostructured materials; polishing; silicon; surface acoustic wave resonators; wide band gap semiconductors; AlN-C-Si; CVD; aluminium nitride-diamond-silicon technology; high-frequency SAW resonators; microcrystalline diamond; nanocrystalline diamond; polishing; silicon substrate; surface roughness; Diamond-like carbon; Films; Rough surfaces; Silicon; Substrates; Surface acoustic waves; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium (IUS), 2011 IEEE International

Conference_Location

Orlando, FL

ISSN

1948-5719

Print_ISBN

978-1-4577-1253-1

Type

conf

DOI

10.1109/ULTSYM.2011.0138

Filename

6293303