DocumentCode
3228005
Title
Controlled growth of InP/GaInAs(P) based structures by MOCVD
Author
Thrush, E.J.
Author_Institution
Thomas Swan & Co. Ltd., Cambridge, UK
Volume
2
fYear
1995
fDate
30 Oct-2 Nov 1995
Firstpage
92
Abstract
High quality InP/GaInAs(P) structures require precise control of bulk alloy composition and near ideal heterojunction interfaces. The paper reviews some practical solutions to growth problems which had to be overcome to meet these criteria
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor heterojunctions; semiconductor quantum wells; vapour phase epitaxial growth; InP-GaInAs; InP-GaInAsP; InP/GaInAs; InP/GaInAsP; MOCVD; bulk alloy composition; growth problems; near ideal heterojunction interfaces; reviews; Heterojunctions; Indium phosphide; Inductors; Instruments; Lattices; MOCVD; Monitoring; Reproducibility of results; Solids; Uniaxial strain;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location
San Francisco, CA
Print_ISBN
0-7803-2450-1
Type
conf
DOI
10.1109/LEOS.1995.484612
Filename
484612
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