Quantum well intermixing by proton irradiation

Author

Tan, H.H. ; Jagadish, C. ; Gal, M.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

Volume

2

fYear

1995

fDate

30 Oct-2 Nov 1995

Firstpage

94

Abstract

In this work, keV proton irradiation, with subsequent thermal annealing, is used to create intermixing in a quantum well structure based on the GaAs-AlGaAs system. Low temperature photoluminescence (PL) was used to monitor the energy shift before and after intermixing. Comparison was also made between one set of samples annealed at 800 C in a metal-organic chemical-vapor-deposition (MOCVD) reactor

Keywords

III-V semiconductors; aluminium compounds; annealing; chemical vapour deposition; epitaxial growth; gallium arsenide; ion beam effects; ion beam mixing; photoluminescence; proton effects; semiconductor growth; semiconductor quantum wells; 800 C; GaAs-AlGaAs; GaAs-AlGaAs system; MOCVD reactor; energy shift; intermixing; keV proton irradiation; low temperature photoluminescence; metal-organic chemical-vapor-deposition; proton irradiation; quantum well intermixing; quantum well structure; thermal annealing; Degradation; Gallium arsenide; Laser tuning; MOCVD; Photonic band gap; Physics; Protons; Rapid thermal annealing; Shape; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-2450-1

Type

conf

DOI

10.1109/LEOS.1995.484613

Filename

484613