Photoluminescence spectrum characterization of interface in the InGaAsP/InP quantum well structures

Author

Shiyong, Liz ; Songyan, Chen ; Yudong Li ; Hongbo, Sun

Author_Institution

State Key Lab. on Integrated Optoelectron., Jilin Univ., Changchun, China

Volume

2

fYear

1995

fDate

30 Oct-2 Nov 1995

Firstpage

96

Abstract

To determine the alloy composition fluctuation of quaternary semiconductor interface from photoluminescence (PL) spectrum we propose a method using statistical standard deviation theory, in which alloy size radius is key factor. The interfacial fluctuation and irregularity of InGaAsP-InP quantum well has been depicted by the method in the paper

Keywords

III-V semiconductors; fluctuations; gallium arsenide; gallium compounds; indium compounds; photoluminescence; probability; semiconductor quantum wells; spectral line broadening; statistical analysis; InGaAsP-InP; InGaAsP-InP quantum well; InGaAsP/InP quantum well structures; alloy composition fluctuation; alloy size radius; interfacial fluctuation; photoluminescence spectrum; photoluminescence spectrum characterization; quaternary semiconductor interface; statistical standard deviation theory; Equations; Excitons; Fluctuations; Indium phosphide; Photoluminescence; Probability; Semiconductor materials; Statistical distributions; Temperature; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-2450-1

Type

conf

DOI

10.1109/LEOS.1995.484614

Filename

484614