DocumentCode
3228059
Title
1–3 microfabricated composite acoustic matching layers for high frequency transducers
Author
Manh, Tung ; Hoff, Lars ; Johansen, Tonni Franke ; Jensen, Geir Uri
Author_Institution
Inst. of Micro & Nano Syst. Technol., Vestfold Univ. Coll., Horten, Norway
fYear
2011
fDate
18-21 Oct. 2011
Firstpage
1932
Lastpage
1935
Abstract
This paper presents the fabrication and characterization of a 1-3 silicon-polymer composite matching layer made by Deep Reactive Ion Etch (DRIE) method. A well-defined composite layer thickness of 83 μm was obtained by using Silicon-on-Insulator (SOI) wafers as substrate. The resulting composite has 7 μm size posts and 9 μm spacing between posts. A slight tapering of the posts was observed after the DRIE process, causing the posts to be narrower in the bottom than at the top. The composite was used as acoustic matching layer in an air-backed 15 MHz transducer and characterized by electrical impedance measurements in air. The effective acoustic properties of the composite, speed of sound and acoustic impedance, deduced from measured results, were found to be lower than those predicted from iso-strain model. This deviation can be explained by tapering of the trench walls and the dispersion caused by the finite dimensions of the bi-phase material, an explanation that was verified by FEM simulations.
Keywords
acoustic dispersion; acoustic impedance; acoustic wave velocity; elemental semiconductors; filled polymers; finite element analysis; silicon; sputter etching; 1-3 silicon-polymer composite acoustic matching layer; FEM; Si; acoustic impedance; acoustic properties; deep reactive ion etch method; dispersion; electrical impedance measurements; frequency 15 MHz; iso-strain model; silicon-on-insulator wafers; sound speed; transducer; Acoustics; Finite element methods; Impedance; Impedance measurement; Polymers; Silicon; Transducers; 1–3 composite; acoustic matching layers; high frequency transducers; silicon micromachining;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium (IUS), 2011 IEEE International
Conference_Location
Orlando, FL
ISSN
1948-5719
Print_ISBN
978-1-4577-1253-1
Type
conf
DOI
10.1109/ULTSYM.2011.0481
Filename
6293308
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