DocumentCode
3228073
Title
Power semiconductor devices in pulsed power applications
Author
Vossenberg, E.B.
Author_Institution
CERN, Geneva, Switzerland
fYear
1997
fDate
35508
Abstract
Power semiconductors-diodes, thyristors, insulated gate bipolar transistors (IGBTs) and GTOs-are key components in pulsed power applications in the SUBT/FP-EC sections of CERN. This paper mentions these types of semiconductor devices available today and mentions future developments. Since the subject is very large, the physics of the devices are not be discussed in detail but more attention is paid to an overview concerning the device properties and applications in the pulse power circuits at CERN
Keywords
pulsed power switches; GTOs; IGBTs; applications; device properties; diodes; insulated gate bipolar transistors; pulse power circuits; pulsed power semiconductor switches; thyristors;
fLanguage
English
Publisher
iet
Conference_Titel
Pulsed Power '97 (Digest No: 1997/075), IEE Colloquium on
Conference_Location
London
Type
conf
DOI
10.1049/ic:19970425
Filename
644484
Link To Document